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超声波清洗机的QDR清洗工艺特点

来源:/ 时间: 2021-12-30 浏览次数: 2

一、喷淋清洗
1、 Spray cleaning
上喷淋管路共有两路,形成相互交叉喷淋,但去离子水不宜直接喷淋冲洗晶圆表面,因晶圆在水蚀作用下直接喷淋晶圆表面,易产生微粒污泥而污染晶圆表面,因此,在去离子水的喷淋过程中,需要对冲洗水压、水量、方向和角度作出调整测试,以达到微粒污染少的较好效果。 良好的喷嘴所喷淋范围涵盖全部晶圆及片盒; 而不良的喷淋冲洗形状,没有涵盖全部晶圆及片盒,未被喷淋冲洗的死角地带,微粒、杂质及化学药液残留含量仍然很高,而达不到良好的清洗效果。
There are two upper spray pipelines, which form cross spray. However, deionized water should not be sprayed directly to wash the wafer surface. Because the wafer directly sprays the wafer surface under the action of water erosion, it is easy to produce particulate sludge and pollute the wafer surface. Therefore, during the spraying process of deionized water, it is necessary to adjust and test the flushing water pressure, water volume, direction and angle, In order to achieve the better effect of less particle pollution. A good spray nozzle covers all wafers and cassettes; The poor spray flushing shape does not cover all wafers and cartridges, and the dead corner areas that have not been sprayed and flushed. The residual content of particles, impurities and chemical solution is still very high, which can not achieve good cleaning effect.
二、鼓泡冲浪清洗
2、 Bubble surfing cleaning
上喷淋同时,下喷淋管路由底部两侧不断进水,而后由内槽上沿四周溢出,这样,每个晶圆片缝、各处边角的去离子水都能连续得到更新。 同时,纯净气体(氮气或压缩空气)由下喷淋管路进入槽体。鼓泡有以下几个作用:
At the same time of the upper spray, the lower spray pipe continuously enters water on both sides of the bottom, and then overflows from the upper edge of the inner groove around. In this way, the deionized water in each wafer slot and all corners can be continuously updated. Meanwhile, pure gas (nitrogen or compressed air) enters the tank through the lower spray pipeline. Bubbling has the following functions:
超声波清洗机价格
(1)增加了去离子水的冲刷力,对槽体本身有很好的自清洗作用;
(1) It increases the scouring force of deionized water and has a good self-cleaning effect on the tank itself;
(2)晶圆在水流中颤动,气泡不能沾附其上,提高了冲洗效果;
(2) The wafer vibrates in the water flow, and the bubbles cannot adhere to it, which improves the flushing effect;
(3)氮气鼓泡减少去离子水中的含氧量,避免在晶圆表面生成氧化物。
(3) Nitrogen bubbling reduces the oxygen content in deionized water and avoids the formation of oxides on the wafer surface.
三、超声波清洗
3、 Ultrasonic cleaning
苏州富怡达超声波有限公司的QDR增加了超声波功能选项,与鼓泡冲浪清洗交替作用,极大的提高了清洗效率,并有效降低DI水的消耗量。典型的应用方法是:上喷淋+排放→上喷淋+下进水→超声+上喷淋+溢流→鼓泡+上喷淋+溢流→快排放
The QDR of Suzhou fuyida ultrasonic Co., Ltd. has added the option of ultrasonic function to alternate with bubble surfing cleaning, which greatly improves the cleaning efficiency and effectively reduces the consumption of DI water. The typical application method is: upper spray + discharge → upper spray + lower water inlet → ultrasonic + upper spray + overflow → bubbling + upper spray + overflow → fast discharge
四、快冲快排
4、 Rush, row
喷淋注满水时间和排水时间,对晶圆清洗质量有很大影响。 因晶圆表面暴露在空气中会接触空气中的氧分子或水汽,在常温下,即会生长一层很薄的氧化层(约为 0.5~1 nm),这层自然氧化物的厚度与暴露在空气中的时间长短有关, 因此,喷淋注满水时间越长,晶圆暴露在空气中的时间就会越长,因而形成的氧化层也越厚,这对晶圆清洗,是很不利的。 QDR 排水的时间越短,排水流速就会越大,有利于去离子水带走晶圆表面上的微粒杂质。因此,在 QDR 设计中,要尽可能的缩短喷淋注满水时间和排水时间,实现快冲快排,整体效率也会得到提高。超声波的QDR快排及注水时间指标为:注入时间:≤120秒,排放时间:≤12秒。
The spray filling time and drainage time have a great impact on the wafer cleaning quality. Because the wafer surface is exposed to air, it will contact oxygen molecules or water vapor in the air. At room temperature, A very thin oxide layer will grow (about 0.5 ~ 1 nm). The thickness of this layer of natural oxide is related to the length of time exposed to the air. Therefore, the longer the spraying and filling time is, the longer the wafer will be exposed to the air, and the thicker the oxide layer will be formed, which is very unfavorable for wafer cleaning. The shorter the drainage time of QDR, the greater the drainage flow rate, which is conducive to the crystallization of deionized water Particulate impurities on the circular surface. Therefore, in the QDR design, it is necessary to shorten the spraying water filling time and drainage time as much as possible to realize rapid flushing and drainage, and the overall efficiency will be improved. The QDR fast discharge and water injection time indicators of fuyida ultrasonic are: injection time: ≤ 120 seconds, discharge time: ≤ 12 seconds.

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